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Click here for more informationPDTA114TE
PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open
PNP Resistor-Equipped Transistors (RET) family in small plastic packages.
Features and benefits
100 mA output current capability
Reduces component count
Built-in bias resistors
Reduces pick and place costs
Simplifies circuit design
AEC-Q101 qualified
Applications
Digital applications
Cost-saving alternative to BC857 series in digital applications
Control of IC inputs
Low current peripheral driver
參數類型
| 型號 | Package version | Package name | Size (mm) |
|---|---|---|---|
| PDTA114TE | SOT416 | SC-75 | 1.6 x 0.75 x 0.9 |
封裝
下表中的所有產品型號均已停產 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態 | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PDTA114TE | PDTA114TE,115 (934051770115) |
Obsolete |
SC-75 (SOT416) |
SOT416 | SOT416_115 |
文檔 (6)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PDTA114T_SER | PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open | Data sheet | 2025-04-14 |
| AN90063 | Questions about package outline drawings | Application note | 2025-06-13 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| LSYMTRA | Letter Symbols - Transistors; General | Other type | 1999-05-06 |
| SOT416 | plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body | Package information | 2025-01-31 |
| PDTA114TE | PDTA114TE SPICE model | SPICE model | 2025-07-10 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PDTA114TE | PDTA114TE SPICE model | SPICE model | 2025-07-10 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.