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Low VCEsat (BISS) power transistors single
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產品
| 型號 | 描述 | 狀態 | 快速訪問 |
|---|---|---|---|
| LFPAK bipolar transistors | Nexperia bipolar transistors in LFPAK56 and LFPAK56D - the true power packages for smart efficiency | ACT |
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| PHPT60406NY-Q | 40 V, 6 A NPN high power bipolar transistor | Production | |
| PHPT60406PY-Q | 40 V, 6 A PNP high power bipolar transistor | Production | |
| PHPT60410NY-Q | 40 V, 10 A NPN high power bipolar transistor | Production | |
| PHPT60410PY-Q | 40 V, 10 A PNP high power bipolar transistor | Production | |
| PHPT60415NY-Q | 40 V, 15 A NPN high power bipolar transistor | Production | |
| PHPT60415PY-Q | 40 V, 15 A PNP high power bipolar transistor | Production | |
| PHPT60603NY-Q | 60 V, 3 A NPN high power bipolar transistor | Production | |
| PHPT60603PY-Q | 60 V, 3 A PNP high power bipolar transistor | Production | |
| PHPT60606NY-Q | 60 V, 6 A NPN high power bipolar transistor | Production | |
| PHPT60606PY-Q | 60 V, 6 A PNP high power bipolar transistor | Production | |
| PHPT60610NY-Q | 60 V, 10 A NPN high power bipolar transistor | Production | |
| PHPT60610PY-Q | 60 V, 10 A PNP high power bipolar transistor | Production | |
| PHPT61003NY-Q | 100 V, 3 A NPN high power bipolar transistor | Production | |
| PHPT61003PY-Q | 100 V, 3A PNP high power bipolar transistor | Production | |
| PHPT61006NY-Q | 100 V, 6 A NPN high power bipolar transistor | Production | |
| PHPT61006PY-Q | 100 V, 6 A PNP high power bipolar transistor | Production | |
| PHPT61010NY-Q | 100 V, 10 A NPN high power bipolar transistor | Production | |
| PHPT61010PY-Q | 100 V, 10 A PNP high power bipolar transistor | Production | |
| PBSS4620PA-Q | 20 V, 6 A NPN low VCEsat transistor | Production | |
| PBSS5540Z-Q | 40 V low VCEsat PNP transistor | Production |
Visit our documentation center for all documentation
Marcom graphics (1) |
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|---|---|---|---|
| 文件名稱 | 標題 | 類型 | 日期 |
| LFPAK56_POWER-SO8_SOT669_mk.png | plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body | Marcom graphics | 2017-01-28 |