可訂購部件
| 型號(hào) | 可訂購的器件編號(hào) | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| 74AHC257D | 74AHC257D,118 | 935265467118 | SOT109-1 | 訂單產(chǎn)品 |
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Click here for more information74AHC257D
Quad 2-input multiplexer; 3-state
The 74AHC257; 74AHCT257 is a quad 2-input multiplexer with 3-state outputs. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments.
Alternatives
Features and benefits
Balanced propagation delays
All inputs have Schmitt-trigger actions
Non-inverting data path
Wide supply voltage range from 2.0 V to 5.5 V
Input levels:
For 74AHC257: CMOS level
For 74AHCT257: TTL level
Overvoltage tolerant inputs to 5.5 V
High noise immunity
CMOS low power dissipation
Latch-up performance exceeds 100 mA per JESD 78 Class II Level A
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
參數(shù)類型
| 型號(hào) | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
|---|---|---|---|---|---|---|---|---|---|---|
| 74AHC257D | 2.0?-?5.5 | CMOS | ± 8 | 2.9 | low | -40~125 | 94 | 10.3 | 53 | SO16 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
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封裝
| 型號(hào) | 可訂購的器件編號(hào)，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74AHC257D | 74AHC257D,118 (935265467118) |
Active | 74AHC257D |
SO16 (SOT109-1) |
SOT109-1 |
SO-SOJ-REFLOW
SO-SOJ-WAVE WAVE_BG-BD-1 |
SOT109-1_118 |
環(huán)境信息
| 型號(hào) | 可訂購的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74AHC257D | 74AHC257D,118 | 74AHC257D |
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Series
文檔 (13)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| 74AHC_AHCT257 | Quad 2-input multiplexer; 3-state | Data sheet | 2024-03-07 |
| AN11106 | Pin FMEA for AHC/AHCT family | Application note | 2019-01-09 |
| AN90063 | Questions about package outline drawings | Application note | 2025-06-13 |
| SOT109-1 | 3D model for products with SOT109-1 package | Design support | 2020-01-22 |
| ahc257 | ahc257 IBIS model | IBIS model | 2013-04-08 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SO16_SOT109-1_mk | plastic, small outline package; 16 leads; 1.27 mm pitch; 9.9 mm x 3.9 mm x 1.35 mm body | Marcom graphics | 2017-01-28 |
| SOT109-1 | plastic, small outline package; 16 leads; 1.27 mm pitch; 9.9 mm x 3.9 mm x 1.75 mm body | Package information | 2023-11-07 |
| SOT109-1_118 | SO16; Reel pack for SMD, 13"; Q1/T1 product orientation | Packing information | 2024-02-19 |
| 74AHC257D_Nexperia_Product_Reliability | 74AHC257D Nexperia Product Reliability | Quality document | 2025-03-20 |
| SO-SOJ-REFLOW | Footprint for reflow soldering | Reflow soldering | 2009-10-08 |
| SO-SOJ-WAVE | Footprint for wave soldering | Wave soldering | 2009-10-08 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
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訂購、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| 74AHC257D | 74AHC257D,118 | 935265467118 | Active | SOT109-1_118 | 2,500 |
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樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.