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Click here for more informationPDTA123EE
PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm
PNP resistor-equipped transistor (see ?Simplified outline, symbol and pinning? for package details).
Features and benefits
Built-in bias resistors
Simplified circuit design
Reduction of component count
Reduced pick and place costs.
AEC-Q101 qualified
Applications
General purpose switching and amplification
Inverter and interface circuits
Circuit driver.
參數類型
| 型號 | Package version | Package name | Size (mm) |
|---|---|---|---|
| PDTA123EE | SOT416 | SC-75 | 1.6 x 0.75 x 0.9 |
封裝
下表中的所有產品型號均已停產 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態 | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PDTA123EE | PDTA123EE,115 (934058175115) |
Obsolete |
SC-75 (SOT416) |
SOT416 | SOT416_115 |
文檔 (6)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PDTA123E_SERIES | PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm | Data sheet | 2004-08-01 |
| AN90063 | Questions about package outline drawings | Application note | 2025-06-13 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| LSYMTRA | Letter Symbols - Transistors; General | Other type | 1999-05-06 |
| SOT416 | plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body | Package information | 2025-01-31 |
| PDTA123EE | PDTA123EE SPICE model | SPICE model | 2025-07-10 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PDTA123EE | PDTA123EE SPICE model | SPICE model | 2025-07-10 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.