可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| GAN080-650EBE | GAN080-650EBEZ | 934665901332 | SOT8074-1 | 訂單產(chǎn)品 |
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Click here for more informationGAN080-650EBE
650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8?mm?x?8?mm package
The GAN080-650EBE is a general purpose 650 V, 80 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior performance.
Features and benefits
Enhancement mode - normally-off power switch
Ultra high frequency switching capability
No body diode
Low gate charge, low output charge
Qualified for standard applications
ESD protection
RoHS, Pb-free, REACH-compliant
High efficiency and high power density
Low package inductance and low package resistance
Applications
High power density and high efficiency power conversion
AC-to-DC converters, totem pole PFC
DC-to-DC converters
Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers
Datacom and telecom (AC-to-DC and DC-to-DC) converters
Motor drives
Solar (PV) inverters
Class D audio amplifiers, TV PSU and LED drivers
參數(shù)類型
| 型號 | Package version | Package name | Product status | Configuration | Channel type | Nr of transistors | VDS [max] (V) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GAN080-650EBE | SOT8074-1 | DFN8080-8 | Production | e-mode | N | 1 | 650 | 150 | 29 | 2.2 | 240 | 1.7 | N | 225 | 70 | 2023-02-22 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| GAN080-650EBE | GAN080-650EBEZ (934665901332) |
Active | 080IEBE |
DFN8080-8 (SOT8074-1) |
SOT8074-1 | SOT8074-1_332 |
Boards
| Part number | Description | Type | Quick links | Shop link |
|---|---|---|---|---|
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描述 Allegro MicroSystems' half-bridge driver-switch demonstration board APEK85110KNH-05-T-MH contains two Gallium Nitride (GaN) FET drivers and two Nexperia GAN080-650EBE 650 V, 80 mΩ GaN FETs in the DFN8080-8 package. It can be used to perform double-pulse tests or to interface the half bridge to an existing LC power section.
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類型 Reference design
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Quick links
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Shop link
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文檔 (22)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| GAN080-650EBE | 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8?mm?x?8?mm package | Data sheet | 2023-05-05 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90021 | Power GaN technology: the need for efficient power conversion | Application note | 2020-08-14 |
| AN90041 | Gate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs | Application note | 2023-05-09 |
| AN90063 | Questions about package outline drawings | Application note | 2025-06-13 |
| SOT8074-1 | 3D model for products with SOT8074-1 package | Design support | 2023-04-13 |
| SOT8074-1 | plastic thermal enhanced small outline package; no leads; 8 terminals; body: 8 x 8 x 0.9 mm | Package information | 2023-03-29 |
| SOT8074-1_332 | DFN8080-8; Reel dry pack for SMD, 13"; Q2/T3 product orientation | Packing information | 2023-04-18 |
| GAN080-650EBE | GAN080-650EBE SPICE model | SPICE model | 2023-04-12 |
| GAN080-650EBE_LTspice | GAN080-650EBE LTspice SPICE model | SPICE model | 2025-07-09 |
| GAN080-650EBE_SIMetrix | GAN080-650EBE SIMetrix SPICE model | SPICE model | 2025-07-09 |
| TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
| CauerModel_GAN080-650EBE | Cauer model GAN080-650EBE | Thermal model | 2023-04-12 |
| FosterModel_GAN080-650EBE | Foster model GAN080-650EBE | Thermal model | 2023-04-12 |
| GAN080-650EBE | GAN080-650EBE RC thermal model | Thermal model | 2023-04-12 |
| GAN080-650EBE_Cauer | GAN080-650EBE Cauer model | Thermal model | 2023-04-12 |
| GAN080-650EBE_Foster | GAN080-650EBE Foster model | Thermal model | 2023-04-12 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮書: 功率GaN技術： 高效功率轉換的需求 | White paper | 2020-08-17 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| SOT8074-1 | 3D model for products with SOT8074-1 package | Design support | 2023-04-13 |
| GAN080-650EBE | GAN080-650EBE SPICE model | SPICE model | 2023-04-12 |
| GAN080-650EBE_LTspice | GAN080-650EBE LTspice SPICE model | SPICE model | 2025-07-09 |
| GAN080-650EBE_SIMetrix | GAN080-650EBE SIMetrix SPICE model | SPICE model | 2025-07-09 |
| CauerModel_GAN080-650EBE | Cauer model GAN080-650EBE | Thermal model | 2023-04-12 |
| FosterModel_GAN080-650EBE | Foster model GAN080-650EBE | Thermal model | 2023-04-12 |
| GAN080-650EBE | GAN080-650EBE RC thermal model | Thermal model | 2023-04-12 |
| GAN080-650EBE_Cauer | GAN080-650EBE Cauer model | Thermal model | 2023-04-12 |
| GAN080-650EBE_Foster | GAN080-650EBE Foster model | Thermal model | 2023-04-12 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| GAN080-650EBE | GAN080-650EBEZ | 934665901332 | Active | SOT8074-1_332 | 2,500 |
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樣品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.