可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| PDTA123YQB-Q | PDTA123YQB-QZ | 934666010147 | SOT8015 | 訂單產(chǎn)品 |
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Click here for more informationPDTA123YQB-Q
50 V, 100 mA PNP resistor-equipped transistor; R1?=?2.2?k?,?R2:?10?k?
100 mA PNP Resistor-Equipped Transistor (RET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.
NPN complement: PDTC123YQB-Q
Features and benefits
100 mA output current capability
Built-in resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
Low package height of 0.5 mm
Suitable for Automatic Optical Inspection (AOI) of solder joint
Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
Digital applications
Cost saving alternative for BC847 series in digital applications
Controlling IC inputs
Switching loads
參數(shù)類型
| 型號(hào) | Package version | Package name | Size (mm) |
|---|---|---|---|
| PDTA123YQB-Q | SOT8015 | DFN1110D-3 | 1.1 x 1 x 0.48 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PDTA123YQB-Q | PDTA123YQB-QZ (934666010147) |
Active | QD |
DFN1110D-3 (SOT8015) |
SOT8015 |
REFLOW_BG-BD-1
|
SOT8015_147 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PDTA123YQB-Q | PDTA123YQB-QZ | PDTA123YQB-Q |
|
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文檔 (13)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PDTA123YQB-Q | 50 V, 100 mA PNP resistor-equipped transistor; R1?=?2.2?k?,?R2:?10?k? | Data sheet | 2023-11-24 |
| AN90023 | Thermal performance of DFN packages | Application note | 2020-11-23 |
| AN90023_ZH | Thermal performance of DFN packages | Application note | 2021-02-26 |
| AN90032 | Low temperature soldering, application study | Application note | 2022-02-22 |
| AN90063 | Questions about package outline drawings | Application note | 2025-06-13 |
| Nexperia_asset_document_brochure_autoDFN_CN_LR | 小巧輕便的汽車 二極管和晶體管 | Brochure | 2022-04-26 |
| SOT8015 | 3D model for products with SOT8015 package | Design support | 2022-05-03 |
| Nexperia_AutoDFN_factsheet_2022 | Small & light automotive diodes and transistors | Leaflet | 2022-04-13 |
| SOT8015 | plastic, leadless extremely thin small outline package with side-wettable flanks (SWF); 3 terminals; 0.65 mm pitch; 1.1 mm x 1 mm x 0.48 mm body | Package information | 2023-05-31 |
| SOT8015_147 | DFN1110D-3; Reel pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2021-02-08 |
| PDTA123YQB-Q_Nexperia_Product_Reliability | PDTA123YQB-Q Nexperia Product Reliability | Quality document | 2025-05-28 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PDTA123YQB-Q | PDTA123YQB-Q SPICE model | SPICE model | 2025-07-10 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PDTA123YQB-Q | PDTA123YQB-Q SPICE model | SPICE model | 2025-07-10 |
| SOT8015 | 3D model for products with SOT8015 package | Design support | 2022-05-03 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| PDTA123YQB-Q | PDTA123YQB-QZ | 934666010147 | Active | SOT8015_147 | 5,000 |
|
樣品
作為 Nexperia 的客戶，您可以通過(guò)我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.