可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| PUMH13-Q | PUMH13-QX | 934664453115 | SOT363 | 訂單產(chǎn)品 |
| PUMH13-Q | PUMH13-QF | 934664453135 | SOT363 | 訂單產(chǎn)品 |
Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationPUMH13-Q
NPN/NPN double Resistor-Equipped Transistor (RET); R1=?4.7?kΩ,?R2?=?47?kΩ
NPN/NPN double Resistor-Equipped Transistor (RET) in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package.
Features and benefits
100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
Low current peripheral driver
Control of IC inputs
Replaces general-purpose transistors in digital applications
參數(shù)類型
| 型號 | Package version | Package name | Size (mm) | Channel type | Ptot (mW) | R2 (typ) (kΩ) | IC [max] (mA) | R1 (typ) (kΩ) | VCEO (V) |
|---|---|---|---|---|---|---|---|---|---|
| PUMH13-Q | SOT363 | TSSOP6 | 2.1 x 1.25 x 0.95 | NPN/NPN | 300 | 47 | 100 | 4.7 | 50 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PUMH13-Q | PUMH13-QX (934664453115) |
Active | H0% |
TSSOP6 (SOT363) |
SOT363 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT363_115 |
| PUMH13-QF (934664453135) |
Active | H0% | SOT363_135 |
環(huán)境信息
品質(zhì)及可靠性免責聲明文檔 (14)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PUMH13-Q | NPN/NPN double Resistor-Equipped Transistor (RET); R1=?4.7?kΩ,?R2?=?47?kΩ | Data sheet | 2023-05-15 |
| AN90032 | Low temperature soldering, application study | Application note | 2022-02-22 |
| AN90063 | Questions about package outline drawings | Application note | 2025-06-13 |
| Nexperia_document_guide_MiniLogic_PicoGate_201901 | PicoGate leaded logic portfolio guide | Brochure | 2019-01-07 |
| SOT363 | 3D model for products with SOT363 package | Design support | 2018-12-05 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| TSSOP6_SOT363_mk | plastic, surface-mounted package; 6 leads; 1.3 mm pitch; 2 mm x 1.25 mm x 0.95 mm body | Marcom graphics | 2017-01-28 |
| SOT363 | plastic, surface-mounted package; 6 leads; 0.65 mm pitch; 2.1 mm x 1.25 mm x 0.95 mm body | Package information | 2022-06-01 |
| SOT363_115 | TSSOP6; Reel pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2020-06-12 |
| SOT363_135 | TSSOP6; Tape reel SMD; standard product orientation 12NC ending 135 | Packing information | 2020-04-27 |
| PUMH13-Q_Nexperia_Product_Reliability | PUMH13-Q Nexperia Product Reliability | Quality document | 2025-05-28 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| MAR_SOT363 | MAR_SOT363 Topmark | Top marking | 2013-06-03 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| SOT363 | 3D model for products with SOT363 package | Design support | 2018-12-05 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PUMH13-Q | PUMH13-QX | 934664453115 | Active | SOT363_115 | 3,000 |
|
| PUMH13-Q | PUMH13-QF | 934664453135 | Active | SOT363_135 | 10,000 |
|
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.