可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經銷商處購買 |
|---|---|---|---|---|
| PSMN1R9-80SSJ | PSMN1R9-80SSJJ | 934668818118 | SOT1235 | 訂單產品 |
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Click here for more informationPSMN1R9-80SSJ
N-channel 80 V, 1.9 mOhm ASFET with enhanced dynamic current sharing in LFPAK88
In high-power applications, it is common practice to connect two or more MOSFETs in parallel to provide high current capability. Even when the gates are driven from the same gate driver, it can be challenging to ensure that MOSFETs share the load current equally.
Small differences in VGS(th) for individual devices cause the MOSFET with the lowest VGS(th) to turn-on first, taking a larger share of the load current during the dynamic switching phase.
The difference in load current between individual MOSFETs (ΔID) can be significant often leading to differential heating and potential accelerated failure.
One method to reduce the ΔI between MOSFETs is to select devices with matched VGS(th), but testing & sorting MOSFETs with matched VGS(th) can be a difficult process. VGS(th) is typically measured at ΔID ≤ 1 mA and is influenced by temperature also.
ASFETs with enhanced dynamic current sharing are designed to show significantly improved current sharing with low ΔID when connected in parallel applications.
Features and benefits
Removes the need for VGS(th) matching
Low ΔID enhances current sharing in parallel applications
Reduced VGS(th) spread
Low RDSon
286 A continuous ID Max
Avalanche rated, 100% tested
Compact and Reliable 8x8 LFPAK88 package, qualified to 175 °C
Applications
Applications using MOSFETs in parallel
Applications utilizing MOSFETs with matched VGS(th)
High-power motor control
參數類型
| 型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PSMN1R9-80SSJ | SOT1235 | LFPAK88 | Production | N | 1 | 80 | 1.9 | 175 | 286 | 6 | 272 | 500 | 103 | 2.25 | N | 24807 | 2823 | 2024-10-02 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態 | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PSMN1R9-80SSJ | PSMN1R9-80SSJJ (934668818118) |
Active | X1J9S80S |
LFPAK88 (SOT1235) |
SOT1235 |
REFLOW_BG-BD-1
|
SOT1235_118 |
Series
文檔 (21)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PSMN1R9-80SSJ | N-channel 80 V, 1.9 mOhm ASFET with enhanced dynamic current sharing in LFPAK88 | Data sheet | 2025-06-20 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2025-09-10 |
| AN11261 | RC Thermal Models | Application note | 2025-09-10 |
| AN50005 | Paralleling power MOSFETs in high power applications | Application note | 2025-09-08 |
| AN50019 | Thermal boundary condition study on MOSFET packages and PCB substrates | Application note | 2025-09-10 |
| AN90003 | LFPAK MOSFET thermal design guide | Application note | 2025-09-01 |
| AN90016 | Maximum continuous currents in NEXPERIA LFPAK power MOSFETs | Application note | 2025-09-08 |
| AN90034 | Nexperia Precision Electrothermal models in SPICE and VHDL-AMS for Power MOSFETs | Application note | 2025-09-01 |
| AN90059 | Power MOSFET gate driver fundamentals | Application note | 2025-09-10 |
| AN90063 | Questions about package outline drawings | Application note | 2025-06-13 |
| SOT1235 | 3D model for products with SOT1235 package | Design support | 2020-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| LFPAK88_sot1235_mk | plastic, single-ended surface-mounted package (LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body | Marcom graphics | 2019-04-10 |
| SOT1235 | plastic, single-ended surface-mounted package (LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body | Package information | 2022-05-30 |
| SOT1235_118 | LFPAK88; Reel pack, SMD, 13"; Q1/T1 standard product orientation; Orderable part number ending ,118 or Z; Ordering code (12NC) ending 118 | Packing information | 2020-04-21 |
| T12_SOT1235_PSMN1R9-80SSJ_Nexperia_Quality_Reliability_document | T12_SOT1235_PSMN1R9-80SSJ_Nexperia_Quality_Reliability_document | Quality document | 2025-05-13 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PSMN1R9-80SSJ | PSMN1R9-80SSJ SPICE model | SPICE model | 2025-07-10 |
| PSMN1R9-80SSJ | PSMN1R9-80SSJ RC thermal model | Thermal model | 2025-06-05 |
| PSMN1R9-80SSJ_Cauer | PSMN1R9-80SSJ Cauer Thermal model | Thermal model | 2025-06-05 |
| PSMN1R9-80SSJ_Foster | PSMN1R9-80SSJ Foster Thermal model | Thermal model | 2025-06-05 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PSMN1R9-80SSJ | PSMN1R9-80SSJ SPICE model | SPICE model | 2025-07-10 |
| PSMN1R9-80SSJ | PSMN1R9-80SSJ RC thermal model | Thermal model | 2025-06-05 |
| PSMN1R9-80SSJ_Cauer | PSMN1R9-80SSJ Cauer Thermal model | Thermal model | 2025-06-05 |
| PSMN1R9-80SSJ_Foster | PSMN1R9-80SSJ Foster Thermal model | Thermal model | 2025-06-05 |
| SOT1235 | 3D model for products with SOT1235 package | Design support | 2020-01-22 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態 | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PSMN1R9-80SSJ | PSMN1R9-80SSJJ | 934668818118 | Active | SOT1235_118 | 2,000 |
|
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機構訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區分銷商網絡可為您提供 Nexperia 樣品支持。查看官方經銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.