可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經銷商處購買 |
|---|---|---|---|---|
| PMPB11EN | PMPB11EN,115 | 934066621115 | SOT1220-4 | 訂單產品 |
| PMPB11EN | PMPB11ENX | 934066621184 | SOT1220-4 | 訂單產品 |
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Click here for more informationPMPB11EN
30 V, N-channel Trench MOSFET
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Trench MOSFET technology
Very fast switching
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
Applications
Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portables
Hard disk and computing power management
參數類型
| 型號 | Package version | Package name | Product status | Release date |
|---|---|---|---|---|
| PMPB11EN | SOT1220-4 | DFN2020M-6 | Production | 2012-05-16 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態 | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PMPB11EN | PMPB11EN,115 (934066621115) |
Active | 1C |
DFN2020M-6 (SOT1220-4) |
SOT1220-4 | SOT1220-4_115 | |
| PMPB11ENX (934066621184) |
Active | 1C | 暫無信息 |
環境信息
品質及可靠性免責聲明Series
文檔 (19)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PMPB11EN | 30 V, N-channel Trench MOSFET | Data sheet | 2018-07-12 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2025-09-10 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11119 | Medium power small-signal MOSFETs in DC-to-DC conversion | Application note | 2013-05-07 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2025-09-10 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2025-09-08 |
| AN11261 | RC Thermal Models | Application note | 2025-09-10 |
| AN11304 | MOSFET load switch PCB with thermal measurement | Application note | 2013-01-28 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN90023 | Thermal performance of DFN packages | Application note | 2020-11-23 |
| AN90059 | Power MOSFET gate driver fundamentals | Application note | 2025-09-10 |
| AN90063 | Questions about package outline drawings | Application note | 2025-06-13 |
| SOT1220-4 | plastic thermal enhanced ultra thin small outline package; no leads;6 terminals; body 2 x 2 x 0.60 mm | Package information | 2024-03-04 |
| SOT1220-4_115 | DFN2020MD-6 ; Reel pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2024-02-09 |
| nexperia_report_aoi_inspection_dfn_201808 | Automatic Optical Inspection of DFN Components | Report | 2018-09-03 |
| PMPB11EN_12_04_2012 | PMPB11EN Spice model | SPICE model | 2013-12-13 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2025-09-10 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PMPB11EN_12_04_2012 | PMPB11EN Spice model | SPICE model | 2013-12-13 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態 | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PMPB11EN | PMPB11EN,115 | 934066621115 | Active | SOT1220-4_115 | 3,000 |
|
| PMPB11EN | PMPB11ENX | 934066621184 | Active | 暫無信息 | 3,000 |
|
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機構訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區分銷商網絡可為您提供 Nexperia 樣品支持。查看官方經銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.