可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經銷商處購買 |
|---|---|---|---|---|
| PMCM4401VNE | PMCM4401VNEAZ | 934068854084 | OL-PMCM4401VNE | 訂單產品 |
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Click here for more informationPMCM4401VNE
12V, N-channel Trench MOSFET
N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
Features and benefits
Low threshold voltage
Ultra small package: 0.78 × 0.78 × 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Applications
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
參數類型
| 型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | VESD (kV) (kV) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | VGSth @25 C [min] (V) | VGSth [typ] (V) | VGSth [max] @25 C (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMCM4401VNE | OL-PMCM4401VNE | WLCSP4 | Production | N | 1 | 12 | 8 | 42 | 54 | 2000 | 150 | 6 | 1.8 | 6 | 0.4 | 0.4 | 0.6 | 0.9 | N | 335 | 130 | 2015-07-24 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態 | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PMCM4401VNE | PMCM4401VNEAZ (934068854084) |
Active |
WLCSP4 (OL-PMCM4401VNE) |
OL-PMCM4401VNE |
pmcm4401vne-ssmos_fr
|
暫無信息 |
Series
文檔 (15)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PMCM4401VNE | 12V, N-channel Trench MOSFET | Data sheet | 2017-05-04 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11261 | RC Thermal Models | Application note | 2025-09-10 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| OL-PMCM4401VNE | 3D model for products with OL-PMCM4401VNE package | Design support | 2023-03-13 |
| nexperia_document_leaflet_SsMOS_for_mobile_2022-CHN | 適合移動和便攜式設備的 大批量小信號MOSFET， 采用WLCSP和無引腳DFN封裝 | Leaflet | 2022-07-04 |
| nexperia_document_leaflet_SsMOS_for_mobile_2022 | High volume small-signal MOSFETs for mobile and portables, in WLCSP and leadless DFN packages | Leaflet | 2022-07-04 |
| nexperia_document_leaflet_WLCSP_201803 | Small-signal MOSFETs in WLCSP - Smallest size - lowest RDS(on) | Leaflet | 2018-04-25 |
| nexperia_document_leaflet_WLCSP_201803_CHN | WLCSP Chinese Translation | Leaflet | 2018-04-25 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| OL-PMCM4401VNE | wafer level chip-size package; 4 bumps (2 x 2); 0.4 mm pitch; 0.8 mm x 0.8 mm x 0.15 mm body | Package information | 2022-07-13 |
| pmcm4401vne-ssmos_fr | pmcm4401vne-ssmos_fr | Reflow soldering | 2015-07-10 |
| PMCM4401VNE | PMCM4401VNE Spice model | SPICE model | 2018-07-02 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2025-09-10 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PMCM4401VNE | PMCM4401VNE Spice model | SPICE model | 2018-07-02 |
| OL-PMCM4401VNE | 3D model for products with OL-PMCM4401VNE package | Design support | 2023-03-13 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態 | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PMCM4401VNE | PMCM4401VNEAZ | 934068854084 | Active | 暫無信息 | 9,000 |
|
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機構訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區分銷商網絡可為您提供 Nexperia 樣品支持。查看官方經銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.