可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| NXT4559UP | NXT4559UPZ | 935691709336 | SOT8027-1 | 訂單產(chǎn)品 |
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Click here for more informationNXT4559UP
SIM card interface level translator
The NXT4559 device is built for interfacing a SIM card with a single low-voltage host side interface. The NXT4559 has three level translators to convert the data, RST and CLK signals between a SIM card and a host microcontroller. A high speed level translation capable of supporting class?-?B, class?-?C SIM cards. VCC_SIM power-down initiates a shutdown sequence on SIM card pins in accordance with ISO-7816-3.
The NXT4559 is compliant with all ETSI, IMT-2000 and ISO-7816 SIM/Smart card interface requirements.
Features and benefits
Support SIM cards and eSIM with supply voltages 1.62 V to 3.3 V
Host micro-controller operating voltage range: 1.08 V to 1.98 V
Automatic level translation of I/O, RST and CLK between SIM card and host side interface with capacitance isolation
Incorporates shutdown feature for the SIM card signals according to ISO-7816-3
High Vdis(UVLO_AC) switching level, arranging quick shut down when VCC_SIM powers down
Integrated pull-up resistors; no external resistor required
Integrated EMI Filters suppresses higher harmonics of digital I/O's
Low current shutdown mode < 1 μA
Supports clock speed beyond 5 MHz clock
Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen and antimony (Dark Green compliant)
Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
IEC61000-4-2 level 4, contact and air discharge on all SIM card-side pins exceeds 8 kV and 15 kV
Available in 9-pin wafer level chip-scale package (WLCSP); 9 bumps; 1.06 mm x 1.06 mm x 0.43 mm body; 0.35 mm pitch
Specified from -40 °C to +85 °C
Applications
NXT4559 can be used with a range of SIM card attached devices including:
Mobile and personal phones
Wireless modems
SIM card terminals
參數(shù)類型
| 型號 | VCC(A) (V) | VCC(B) (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | Nr of bits | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name | Category |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NXT4559UP | 1.08?-?1.98 | 1.62?-?3.3 | CMOS | ± 1 | 20 | 3 | low | -40~85 | 106 | 0.15 | - | WLCSP9 | Application specific |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| NXT4559UP | NXT4559UPZ (935691709336) |
Active | z9 |
WLCSP9 (SOT8027-1) |
SOT8027-1 | SOT8027-1_336 |
Series
文檔 (8)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| NXT4559 | SIM card interface level translator | Data sheet | 2024-02-27 |
| AN90063 | Questions about package outline drawings | Application note | 2025-06-13 |
| SOT8027-1 | 3D model for products with SOT8027-1 package | Design support | 2023-02-07 |
| nxt4559up | NXT4559UP IBIS model | IBIS model | 2023-12-21 |
| SIM_card_NXT4558_NXT4559_leaflet | SIM card interface level translators | Leaflet | 2024-06-28 |
| SOT8027-1 | wafer level chip-scale package; 9 bumps; 1.06 mm x 1.06 mm x 0.43 mm body | Package information | 2022-09-27 |
| SOT8027-1_336 | WLCSP9; Reel dry pack for SMD, 7"; Q1/T1 product orientation | Packing information | 2023-03-03 |
| NXT4559UP_Nexperia_Product_Reliability | NXT4559UP Nexperia Product Reliability | Quality document | 2025-03-20 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| NXT4559UP | NXT4559UPZ | 935691709336 | Active | SOT8027-1_336 | 3,000 |
|
樣品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.