可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經銷商處購買 |
|---|---|---|---|---|
| NHDTA123JT | NHDTA123JTR | 934661362215 | SOT23 | 訂單產品 |
| NHDTA123JT | NHDTA123JTVL | 934661362235 | SOT23 | 訂單產品 |
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Click here for more informationNHDTA123JT
80 V, 100 mA PNP resistor-equipped transistors
PNP Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
Type number | R1 | R2 | Package | NPN complement: | |
|---|---|---|---|---|---|
k? | k? | Nexperia | JEDEC | ||
NHDTA123JT | 2.2 | 47 | SOT23 | TO-236AB | NHDTC123JT |
NHDTA143ZT | 4.7 | 47 | NHDTC143ZT | ||
NHDTA114YT | 10 | 47 | NHDTC114YT | ||
Features and benefits
100 mA output current capability
High breakdown voltage
Built-in resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
Applications
Digital applications
Cost saving alternative for BC856 series in digital applications
Controlling IC inputs
Switching loads
參數類型
| 型號 | Package version | Package name | Size (mm) | IC [max] (mA) | R1 (typ) (kΩ) | R2 (typ) (kΩ) | Channel type | Ptot (mW) | VCEO (V) |
|---|---|---|---|---|---|---|---|---|---|
| NHDTA123JT | SOT23 | SOT23 | 2.9 x 1.3 x 1 | 100 | 2.2 | 47 | PNP | 250 | 80 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態 | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| NHDTA123JT | NHDTA123JTR (934661362215) |
Active | QC% |
(SOT23) |
SOT23 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT23_215 |
| NHDTA123JTVL (934661362235) |
Active | QC% | SOT23_235 |
環境信息
| 型號 | 可訂購的器件編號 | 化學成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| NHDTA123JT | NHDTA123JTR | NHDTA123JT |
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| NHDTA123JT | NHDTA123JTVL | NHDTA123JT |
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文檔 (14)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| NHDTA123JT_143ZT_114YT_SER | 80 V, 100 mA PNP resistor-equipped transistors | Data sheet | 2020-07-07 |
| AN90024 | Resistor Equipped Transistors (RETs): Key parameters and application insights | Application note | 2021-08-03 |
| AN90063 | Questions about package outline drawings | Application note | 2025-06-13 |
| SOT23 | 3D model for products with SOT23 package | Design support | 2019-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT23_mk | plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body | Marcom graphics | 2017-01-28 |
| SOT23 | plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body | Package information | 2022-10-12 |
| SOT23_215 | Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2025-01-20 |
| SOT23_235 | Reel pack for SMD, 11"; Q3/T4 product orientation | Packing information | 2020-06-01 |
| NHDTA123JT_Nexperia_Product_Reliability | NHDTA123JT Nexperia Product Reliability | Quality document | 2025-05-28 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| NHDTA123JT | NHDTA123JT SPICE model | SPICE model | 2025-07-09 |
| NHDTA123JT_cauer | NHDTA123JT RC thermal cauer model | Thermal design | 2020-06-22 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| NHDTA123JT | NHDTA123JT SPICE model | SPICE model | 2025-07-09 |
| NHDTA123JT_cauer | NHDTA123JT RC thermal cauer model | Thermal design | 2020-06-22 |
| SOT23 | 3D model for products with SOT23 package | Design support | 2019-01-22 |
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機構訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區分銷商網絡可為您提供 Nexperia 樣品支持。查看官方經銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.