可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經銷商處購買 |
|---|---|---|---|---|
| HEF4001BT-Q100 | HEF4001BT-Q100J | 935300103118 | SOT108-1 | 訂單產品 |
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Click here for more informationHEF4001BT-Q100
Quad 2-input NOR gate
The HEF4001B-Q100 is a quad 2-input NOR gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VDD.
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.
Features and benefits
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Wide supply voltage range from 3.0 V to 15.0 V
CMOS low power dissipation
High noise immunity
Fully static operation
5 V, 10 V, and 15 V parametric ratings
Standardized symmetrical output characteristics
Complies with JEDEC standard JESD 13-B
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ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
參數類型
| 型號 | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| HEF4001BT-Q100 | 3.0?-?15 | CMOS | ± 2.4 | 20 | 10 | 4 | medium | -40~85 | 107 | 19.5 | 65 | SO14 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
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封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態 | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| HEF4001BT-Q100 | HEF4001BT-Q100J (935300103118) |
Active | HEF4001BT |
SO14 (SOT108-1) |
SOT108-1 |
SO-SOJ-REFLOW
SO-SOJ-WAVE WAVE_BG-BD-1 |
SOT108-1_118 |
Series
文檔 (12)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| HEF4001B_Q100 | Quad 2-input NOR gate | Data sheet | 2024-07-16 |
| AN11051 | Pin FMEA HEF4000 family | Application note | 2019-01-09 |
| AN90063 | Questions about package outline drawings | Application note | 2025-06-13 |
| SOT108-1 | 3D model for products with SOT108-1 package | Design support | 2020-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SO14_SOT108-1_mk | plastic, small outline package; 14 leads; 1.27 mm pitch; 8.65 mm x 3.9 mm x 1.75 mm body | Marcom graphics | 2017-01-28 |
| SOT108-1 | plastic, small outline package; 14 leads; 1.27 mm pitch; 8.65 mm x 3.9 mm x 1.75 mm body | Package information | 2023-11-07 |
| SOT108-1_118 | SO14; Reel pack for SMD, 13"; Q1/T1 product orientation | Packing information | 2024-02-19 |
| HEF4001BT-Q100_Nexperia_Product_Reliability | HEF4001BT-Q100 Nexperia Product Reliability | Quality document | 2025-03-20 |
| SO-SOJ-REFLOW | Footprint for reflow soldering | Reflow soldering | 2009-10-08 |
| SO-SOJ-WAVE | Footprint for wave soldering | Wave soldering | 2009-10-08 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| SOT108-1 | 3D model for products with SOT108-1 package | Design support | 2020-01-22 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
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訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態 | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| HEF4001BT-Q100 | HEF4001BT-Q100J | 935300103118 | Active | SOT108-1_118 | 2,500 |
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樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機構訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區分銷商網絡可為您提供 Nexperia 樣品支持。查看官方經銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.