可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| BUK6Y55-80P | BUK6Y55-80PX | 934669256115 | SOT669 | 訂單產(chǎn)品 |
Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationBUK6Y55-80P
80 V, P-channel Trench MOSFET
P-channel enhancement mode Field-Effect Transistor (FET) in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features and benefits
High thermal power dissipation capability
Suitable for thermally demanding environments due to 175 °C rating
Trench MOSFET technology
AEC-Q101 qualified
Applications
Reverse battery protection
Power management
High-side load switch
Motor drive
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | Tj [max] (°C) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK6Y55-80P | SOT669 | LFPAK56; Power-SO8 | Production | P | 1 | -80 | 55 | 80 | 175 | 9.1 | 40 | 150 | 42 | -2 | Y | 2117 | 128 | 2025-05-07 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| BUK6Y55-80P | BUK6Y55-80PX (934669256115) |
Active | 6Y5580P |
LFPAK56; Power-SO8 (SOT669) |
SOT669 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT669_115 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| BUK6Y55-80P | BUK6Y55-80PX | BUK6Y55-80P |
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Series
文檔 (11)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BUK6Y55-80P | 80 V, P-channel Trench MOSFET | Data sheet | 2025-05-08 |
| AN90059 | Power MOSFET gate driver fundamentals | Application note | 2025-09-10 |
| AN90063 | Questions about package outline drawings | Application note | 2025-06-13 |
| SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| LFPAK56_POWER-SO8_SOT669_mk | plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body | Marcom graphics | 2017-01-28 |
| SOT669 | plastic, single-ended surface-mounted package; 4 terminals | Package information | 2025-03-20 |
| SOT669_115 | LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation | Packing information | 2022-05-10 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| BUK6Y55-80P | BUK6Y55-80P SPICE model | SPICE model | 2025-07-09 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BUK6Y55-80P | BUK6Y55-80P SPICE model | SPICE model | 2025-07-09 |
| SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| BUK6Y55-80P | BUK6Y55-80PX | 934669256115 | Active | SOT669_115 | 1,500 |
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樣品
作為 Nexperia 的客戶，您可以通過(guò)我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.