可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經銷商處購買 |
|---|---|---|---|---|
| 74HCS166PW | 74HCS166PWJ | 935691476118 | SOT403-1 | 訂單產品 |
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Click here for more information74HCS166PW
8-bit parallel-in/serial out shift register with Schmitt-trigger inputs
The 74HCS166 is an 8-bit serial or parallel-in/serial-out shift register. The device features a serial data input (DS), eight parallel data inputs (D0 to D7) and a serial output (Q7). When the parallel enable input (PE) is LOW, the data from D0 to D7 is loaded into the shift register on the next LOW?-?to?-?HIGH transition of the clock input (CP). When PE is HIGH, data enters the register serially at DS with each LOW-to-HIGH transition of CP. When the clock enable input (CE) is LOW data is shifted on the LOW-to-HIGH transitions of CP. A HIGH on CE disables the CP input. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.
All inputs are Schmitt-trigger inputs, capable of transforming slowly changing input signals into sharply defined, jitter-free output signals.
Features and benefits
Wide supply voltage range from 2.0 V to 6.0 V
- Schmitt-trigger inputs
- Low power consumption
- Typical supply current (ICC) of 100 nA
- Typical input leakage current (II) of ±10 nA
- ±7.8 mA output drive at 6 V
8-bit serial input and 8-bit serial or parallel output
Storage register with 3-state outputs
Shift register with direct clear
- Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
-
Complies with JEDEC standards:
- JESD7A (2.0 V to 6.0 V)
ESD protection:
HBM ANSI/ESDA/JEDEC JS-001 class 3A exceeds 4000 V
CDM ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1500 V
Multiple package options
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
參數類型
| 型號 | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Package name |
|---|---|---|---|---|---|---|---|---|---|
| 74HCS166PW | 2.0?-?6.0 | CMOS | ± 7.8 | 7 | 220 | 8 | low | -40~125 | TSSOP16 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態 | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74HCS166PW | 74HCS166PWJ (935691476118) |
Active | HCS166 |
TSSOP16 (SOT403-1) |
SOT403-1 |
SSOP-TSSOP-VSO-WAVE
|
SOT403-1_118 |
文檔 (9)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| 74HCS166 | 8-bit parallel-in/serial out shift register with Schmitt-trigger inputs | Data sheet | 2025-06-18 |
| AN90063 | Questions about package outline drawings | Application note | 2025-06-13 |
| SOT403-1 | 3D model for products with SOT403-1 package | Design support | 2020-01-22 |
| 74hcs166 | 74HCS166 IBIS Model | IBIS model | 2025-06-30 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| TSSOP16_SOT403-1_mk | plastic, thin shrink small outline package; 16 leads; 0.65 mm pitch; 5 mm x 4.4 mm x 1.1 mm body | Marcom graphics | 2017-01-28 |
| SOT403-1 | plastic, thin shrink small outline package; 16 leads; 5 mm x 4.4 mm x 1.2 mm body | Package information | 2023-11-08 |
| SOT403-1_118 | TSSOP16; Reel pack for SMD, 13"; Q1/T1 product orientation | Packing information | 2020-04-21 |
| SSOP-TSSOP-VSO-WAVE | Footprint for wave soldering | Wave soldering | 2009-10-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態 | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| 74HCS166PW | 74HCS166PWJ | 935691476118 | Active | SOT403-1_118 | 2,500 |
|
樣品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.