可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經銷商處購買 |
|---|---|---|---|---|
| 74AHCT1G86GW-Q100 | 74AHCT1G86GW-Q100, | 935298629125 | SOT353-1 | 訂單產品 |
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Click here for more information74AHCT1G86GW-Q100
2-input EXCLUSIVE-OR gate
The 74AHC1G86-Q100; 74AHCT1G86-Q100 is a single 2-input EXCLUSIVE-OR gate. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments.
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.
Features and benefits
-
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Wide supply voltage range from 2.0 to 5.5 V
Overvoltage tolerant inputs to 5.5 V
High noise immunity
CMOS low power dissipation
Latch-up performance exceeds 100 mA per JESD 78 Class II Level A
Symmetrical output impedance
Balanced propagation delays
Input levels:
For 74AHC1G86-Q100: CMOS level
For 74AHCT1G86-Q100: TTL level
Multiple package options
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
參數類型
| 型號 | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 74AHCT1G86GW-Q100 | 4.5?-?5.5 | TTL | ± 8 | 3.5 | 60 | 1 | low | -40~125 | 312 | 82.5 | 183 | TSSOP5 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
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封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態 | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74AHCT1G86GW-Q100 | 74AHCT1G86GW-Q100, (935298629125) |
Active | CH |
TSSOP5 (SOT353-1) |
SOT353-1 |
WAVE_BG-BD-1
|
SOT353-1_125 |
文檔 (13)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| 74AHC_AHCT1G86_Q100 | 2-input EXCLUSIVE-OR gate | Data sheet | 2023-10-11 |
| AN10161 | PicoGate Logic footprints | Application note | 2002-10-29 |
| AN11106 | Pin FMEA for AHC/AHCT family | Application note | 2019-01-09 |
| AN90063 | Questions about package outline drawings | Application note | 2025-06-13 |
| Nexperia_document_guide_MiniLogic_PicoGate_201901 | PicoGate leaded logic portfolio guide | Brochure | 2019-01-07 |
| SOT353-1 | 3D model for products with SOT353-1 package | Design support | 2019-09-23 |
| ahct1g86 | ahct1g86 IBIS model | IBIS model | 2013-04-08 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| TSSOP5_SOT353-1_mk | plastic, thin shrink small outline package; 5 leads; 0.65 mm pitch; 2 mm x 1.25 mm x 0.95 mm body | Marcom graphics | 2018-07-25 |
| SOT353-1 | plastic thin shrink small outline package; 5 leads; body width 1.25 mm | Package information | 2022-11-15 |
| SOT353-1_125 | TSSOP5; Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2023-02-21 |
| 74AHCT1G86GW-Q100_Nexperia_Product_Reliability | 74AHCT1G86GW-Q100 Nexperia Product Reliability | Quality document | 2025-03-20 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
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訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態 | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| 74AHCT1G86GW-Q100 | 74AHCT1G86GW-Q100, | 935298629125 | Active | SOT353-1_125 | 3,000 |
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樣品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.