
NXS0506
SD 3.0-compatible memory card integrated auto-direction control and level translator with EMI filter and ESD protection
The NXS0506 is an SD 3.0-compatible bidirectional dual supply level translator with auto?-?direction control. It is designed to interface between a memory card operating at 1.7 V to 3.6 V signal levels and a host with a nominal supply voltage of 1.1 V to 1.95 V. The device supports SD 3.0: SDR104, SDR50, DDR50, SDR25, SDR12 and SD 2.0 High?-?Speed (50 MHz) and Default?-?Speed (25 MHz) modes. The device has a built-in EMI filter and robust ESD protection (IEC 61000?-?4?-?2, ?level 4).
Features and benefits
Supports up to 208 MHz clock rate
SD 3.0 specification-compatible voltage translation to support: SDR104, SDR50, DDR50, SDR25, SDR12, High-Speed and Default-Speed modes
1.1 V to 1.95 V host side interface voltage support
Auto-direction sensing
Low power consumption
Integrated pull-up resistors: no external resistors required
Integrated EMI filters suppress higher harmonics of digital I/Os
Level shifting buffers keep ESD stress away from the host (zero-clamping concept)
16-bumps WLCSP16 package; pitch 0.35 mm
16-terminal XQFN16 package; pitch 0.4 mm
Latch-up performance exceeds 100 mA per JESD78 Class II.A
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
- IEC61000-4-2, level 4, contact discharge on all memory card-side pins exceeds 8000 V
- IEC61000-4-2, level 4, air discharge on all memory card-side pins exceeds 15000 V
Specified from -40 °C to +85 °C
Applications
Smartphone
Mobile handsets
Digital cameras
Tablet PCs
Laptop computers
SD, MMC or microSD card readers
參數類型
型號 | VCC(A) (V) | VCC(B) (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | Nr of bits | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name | Category |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NXS0506GU | 1.1?-?1.95 | 1.7?-?3.6 | CMOS | ± 2 | 2.6 | 6 | low | -40~85 | 98 | 1.2 | 49 | XQFN16 | Application specific |
NXS0506GU-Q100 | 1.1?-?1.95 | 1.7?-?3.6 | CMOS | ± 2 | 2.6 | 6 | low | -40~85 | 98 | 1.2 | 49 | XQFN16 | Application specific |
NXS0506UP | 1.1?-?1.95 | 1.7?-?3.6 | CMOS | ± 2 | 2.6 | 6 | low | -40~85 | 75 | 0.14 | 0.7 | WLCSP16 | Application specific |
封裝
型號 | 可訂購的器件編號,(訂購碼(12NC)) | 狀態 | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
---|---|---|---|---|---|---|---|
NXS0506GU | NXS0506GUX (935691516115) |
Active | m5 |
![]() XQFN16 (SOT1161-1) |
SOT1161-1 | SOT1161-1_115 | |
NXS0506GU-Q100 | NXS0506GU-Q100X (935691498115) |
Active | m5 |
![]() XQFN16 (SOT1161-1) |
SOT1161-1 | SOT1161-1_115 | |
NXS0506UP | NXS0506UPAZ (935691201336) |
Active | m5 |
![]() WLCSP16 (SOT8025-1) |
SOT8025-1 | SOT8025-1_336 |
環境信息
型號 | 可訂購的器件編號 | 化學成分 | RoHS | RHF指示符 |
---|---|---|---|---|
NXS0506GU | NXS0506GUX | NXS0506GU |
|
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NXS0506GU-Q100 | NXS0506GU-Q100X | NXS0506GU-Q100 |
|
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NXS0506UP | NXS0506UPAZ | NXS0506UP |
|
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文檔 (10)
文件名稱 | 標題 | 類型 | 日期 |
---|---|---|---|
NXS0506 | SD 3.0-compatible memory card integrated auto-direction control and level translator with EMI filter and ESD protection | Data sheet | 2024-07-31 |
AN90037 | NXS0506 SD-card voltage level translator | Application note | 2022-09-22 |
AN90063 | Questions about package outline drawings | Application note | 2025-06-13 |
SOT1161-1 | 3D model for products with SOT1161-1 package | Design support | 2023-02-07 |
SOT8025-1 | 3D model for products with SOT8025-1 package | Design support | 2023-02-07 |
nxs0506 | NXS0506 IBIS model | IBIS model | 2021-12-21 |
SD_card_NXS0506_leaflet | SD card NXS0506 LEaflet | Leaflet | 2024-06-28 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
SOT1161-1 | plastic, leadless extermely thin quad flat package; 16 terminals; 0.4 mm pitch; 2.6 mm x 1.8 mm x 0.5 mm body | Package information | 2022-06-15 |
SOT8025-1 | wafer level chip-scale package; 16 bumps; 1.455 mm x 1.455 mm x 0.43 mm bod | Package information | 2022-07-08 |
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